| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that has a breakdown voltage higher than that of the prior art over an application voltage and protects a protection target element with an excellent compactness. Ž<P>SOLUTION: The semiconductor device, which is connected to a protection target element, protects the protection target element with a discharging path between source and drain layers. The semiconductor device includes a semiconductor layer 30 provided on an insulating film 20, a source layer S formed within the semiconductor layer to be extended in a first direction, a drain layer D formed within the semiconductor layer to be extended along the source layer, a plurality of body regions B provided so as to be extended in the first direction in the semiconductor layer between the source and drain layers, and a body connection BCP for connecting the plurality of body regions. A first interval between the source and drain layers at a position relatively away from the body connection is larger than a second interval between the source and drain layers relatively in the vicinity of the body connection. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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