| 摘要 |
A method of manufacturing an LCD driver chip includes forming a heavily doped P-type well and a heavily doped N-type well over a high voltage region of a substrate; and then forming an oxide layer over the heavily doped P-type well and the heavily doped N-type; and then simultaneously forming a first gate electrode over the heavily doped P-type well and a second gate electrode over the heavily doped N-type well including the oxide layer; and then patterning the oxide layer to form a gate insulating layer under the first and second gate electrodes and an oxide layer portion connected to lateral sides of the gate insulating layers; and then forming an insulating layer over the entire surface of the substrate including the first and second gate electrodes and the oxide layer portion; and then forming spacers on sidewalls of the first and second gate electrodes and then removing the oxide layer portion after forming the spacers; and then forming ion implantations regions over the heavily doped P-type well and the heavily doped N-type well.
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