发明名称 POWER SEMICONDUCTOR SWITCHING CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a power semiconductor switching circuit capable of suppressing failure due to saturation current fluctuation of a power semiconductor switching element due to temperature variation. SOLUTION: A power supply voltage which a power supply voltage stabilizing circuit 5 outputs to a drive circuit 4 is adjusted so that a saturation current variation in a power semiconductor switching element 1 by a temperature variation tends to decline, based on a temperature of the power semiconductor switching element 1 which is detected by a temperature detecting circuit 3 and a relationship between the temperature stored in advance and the power supply voltage of the drive circuit 4. Since variation in saturation current decreases even if a temperature variation occurs in the power semiconductor switching element 1, various protection control can be executed with less margin. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009278793(A) 申请公布日期 2009.11.26
申请号 JP20080128537 申请日期 2008.05.15
申请人 DENSO CORP 发明人 OHAMA KENICHI;INOSHITA RYOSUKE
分类号 H02M1/00;H02M1/08 主分类号 H02M1/00
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