| 摘要 |
Disclosed herein are a CMOS image sensor and a method of manufacturing the same, which can reduce current leakage through a plug connecting a photodiode and a transfer transistor to each other, and thereby provide low dark current levels. The CMOS image sensor includes a first epitaxial layer on or in a substrate. A photodiode PD is in the first epitaxial layer. A second epitaxial layer is on or in the substrate (e.g., on the first epitaxial layer). A shallow trench isolation region is in an area of the substrate. A plug is in the substrate (e.g., the second epitaxial layer) connected with the photodiode and spaced apart from the shallow trench isolation region. A transfer transistor having a gate electrode and source/drain regions is connected with the plug.
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