发明名称 |
NITRIDE-BASED COMPOUND SEMICONDUCTOR, METHOD OF CLEANING A COMPOUND SEMICONDUCTOR, METHOD OF PRODUCING THE SAME, AND SUBSTRATE |
摘要 |
There is provided a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. A method of cleaning a nitride-based compound semiconductor in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, a cleaning liquid having a pH of 7.1 or higher is used to clean the nitride-based compound semiconductor.
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申请公布号 |
US2009291567(A1) |
申请公布日期 |
2009.11.26 |
申请号 |
US20090534347 |
申请日期 |
2009.08.03 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HACHIGO AKIHIRO;NISHIURA TAKAYUKI |
分类号 |
H01L21/302;H01L21/304 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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