| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element capable of supressing dark current without reducing the efficiency of photoelectric conversion, to provide a method of manufacturing the photoelectric conversion element, and to provide a solid-state image sensor. Ž<P>SOLUTION: The photoelectric conversion element includes a photoelectric conversion layer 102 arranged between a pair of electrodes 101 and 104, and an electric charge blocking layer 105 formed between the electrodes 101 and 104, and the photoelectric conversion layer 102, wherein an average surface roughness of the electric charge blocking layer 105 is 2.0 nm or less. In other words, a diffraction peak can not be observed in a X-ray diffraction spectrum of the electric charge blocking layer 105, or a half width of the highest diffraction peak therein is ≥5 degrees. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
