| 摘要 |
PROBLEM TO BE SOLVED: To improve the performance of a semiconductor device having a MIS transistor without deteriorating productivity. SOLUTION: After an element p-well pw is formed on a NMIS region RN on a principal plane s1 of a silicon substrate 1 and an element n-well nw is formed on a PMIS region RP, impurity ions to serve as an acceptor are injected through a gate insulation film GI and a first polysilicon film E1a successively formed on the principal plane s1 to control an impurity concentration in a channel region CH. Then, after donor impurities are injected in the NMIS region RN and acceptor impurities are injected in the PMIS region RP among the first polysilicon film E1a and a second polysilicon film formed thereon, these are processed to form an n-type gate electrode and a p-type gate electrode. The gate insulation film GI is formed by oxidizing the principal plane of the silicon substrate 1 and thereafter heat-treating it in an atmosphere of a dinitrogen oxide in a furnace. COPYRIGHT: (C)2010,JPO&INPIT
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