发明名称 |
SCHOTTKY DEVICE |
摘要 |
An integrated circuit structure has a metal silicide layer formed on an n-type well region, a p-type guard ring formed on the n-type well region and encircling the metal silicide layer. The outer portion of the metal silicide layer extends to overlap the inner edge of the guard ring, and a Schottky barrier is formed at the junction of the internal portion of the metal silicide layer and the well region. A conductive contact is in contact with the internal portion and the outer portion of the metal silicide layer.
|
申请公布号 |
US2009283841(A1) |
申请公布日期 |
2009.11.19 |
申请号 |
US20080329677 |
申请日期 |
2008.12.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YEH PING-CHUN;YEH DER-CHYANG;LIU RUEY-HSIN;LIU MINGO |
分类号 |
H01L29/872;H01L27/088;H01L29/78 |
主分类号 |
H01L29/872 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|