| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for increasing a rewriting current without increasing a power supply voltage and also reducing location dependency inside a memory array of a resistive state after the rewriting, in a resistance change type memory in which the resistance values of memory cells are changed between "1" and "0" of logical values. <P>SOLUTION: In the resistance change type memory, bit lines formed into a layered structure, and bit line selection switches BLSW for connecting to global bit lines GBL are arranged at both ends of local bit line LBL, and a control method of the bit line selection switches BLSW is changed over according to the writing time or reading time, thereby array configurations optimum for each of them are obtained. More specifically, at the writing time and reading time, two current paths are prepared in parallel by simultaneously turning ON the bit line selection switches BLSW. <P>COPYRIGHT: (C)2010,JPO&INPIT |
