发明名称 |
SINGLE CRYSTAL MANUFACTURING DEVICE AND MANUFACTURING METHOD |
摘要 |
<p>The device is equipped with a crucible main body (4), wherein silicon carbide starting material (5), which is the starting material for silicon carbide single crystals (20), and a seed crystal (7), whereon a sublimation gas obtained by sublimating the silicon carbide starting material (5) is recrystallized, that are accommodated facing each other, and multiple guide members (8) are provided inside the crucible main body (4). Openings are formed in the guide members (8) at positions corresponding to the seed crystal (7), and are provided at intervals from each other between the silicon carbide starting material (5) and the seed crystal (7).</p> |
申请公布号 |
WO2009139447(A1) |
申请公布日期 |
2009.11.19 |
申请号 |
WO2009JP59013 |
申请日期 |
2009.05.14 |
申请人 |
BRIDGESTONE CORPORATION;MOTOYAMA, TSUYOSHI;KONDO, DAISUKE |
发明人 |
MOTOYAMA, TSUYOSHI;KONDO, DAISUKE |
分类号 |
C30B23/02;C30B29/36;C30B29/38 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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