| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent occurrence of a defect due to an excessive electric field applied to an insulating film as a result of occurrence of over erasure in a dummy cell array. <P>SOLUTION: The nonvolatile semiconductor memory device includes a dummy cell array in which at least one row of dummy cell transistors DT0 to DTn is arranged, a dummy selective transistor DST1 which is connected to one end of the dummy cell transistor row, a dummy selective transistor DST2 which is connected to the other end of the dummy cell transistor row, a cell source line driver CSD which supplies a cell source line voltage VSRC to a cell source line CELSRC, and a dummy bit line driver DBD which supplies a dummy bit line voltage DMBL to a dummy bit line DMBL. When writing is performed on the selected memory cell transistor, the dummy bit line driver supplies a voltage, which is different from a voltage of each bit line other than the bit line to which the memory cell transistor is connected, to at least one of the dummy bit lines as a dummy bit line voltage. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
