发明名称 |
Integrated Circuit Arrangements With ESD-Resistant Capacitor and Corresponding Method of Production |
摘要 |
A circuit arrangement including a capacitor in an n-type well is disclosed. A specific polarization of the capacitor ensures that a depletion zone arises in the well and the capacitor has a high ESD strength. An optionally present auxiliary doping layer ensures a high area capacitance of the capacitor despite high ESD strength.
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申请公布号 |
US2009283810(A1) |
申请公布日期 |
2009.11.19 |
申请号 |
US20090511845 |
申请日期 |
2009.07.29 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ESMARK KAI;GOSSNER HARALD;RUSS CHRISTIAN;SCHNEIDER JENS |
分类号 |
H01L29/94;H01L27/08;H03K3/01 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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