| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to suppress generation of hot electron induced punchthrough by physically separating a gate pattern and an isolation film in a process for etching the gate pattern. CONSTITUTION: A semiconductor device includes an isolation film and a gate pattern. The isolation film is formed in an isolation region. A position of the isolation film is higher than a top part of the semiconductor substrate(100). The gate pattern is formed on an active region adjacent to the isolation region. The gate pattern is physically separated from the isolation film(105).</p> |
