| 摘要 |
PURPOSE: A vertical structure semiconductor light emitting device and a manufacturing method thereof are provided to secure a contact region of a p-type semiconductor layer and an ohmic contact layer while maintaining a function of a metal barrier layer. CONSTITUTION: A vertical structure semiconductor light emitting device includes a conductive substrate, a metal barrier layer, a high reflective ohmic contact layer, a light emitting structure, and an n-type electrode. The metal barrier layer(205) is formed on the conductive substrate(206). The high reflective ohmic contact layer(204) is formed on the metal barrier layer. The light emitting structure(201,202,203) includes a p-type semiconductor layer, an active layer, and an n-type semiconductor layer laminated successively on the high reflective ohmic contact layer. The n-type electrode(208) is formed on the n-type semiconductor layer. The light emitting structure and the high reflective ohmic contact layer are formed in a central part of a top surface of the metal barrier layer in order to be separated from an edge of the metal barrier layer. |
