NOVEL PRECURSORS FOR DEPOSITION OF TELLURIUM THIN FILM AND DEPOSITION METHOD USING THE SAME

摘要

A precursor compound for deposition of tellurium thin film is provided to ensure volatility, thermal stability and deposition performance which are suitable as a precursor compound for manufacturing a tellurium thin film. A precursor compound for deposition of tellurium thin film has a structure represented by chemical formula 1. In chemical formula 1, R1 and R2 are independently hydrogen or linear or branched (C1-C7) alkyl, however, R1 and R2 are not hydrogen at the same time. A method for manufacturing the tellurium thin film comprises the steps of: introducing a reaction substrate inside a chamber; injecting the precursor compound for deposition of tellurium thin film and absorbing it on the substrate; purging the precursor compound for deposition of tellurium thin film remaining in the chamber and by-products; forming the tellurium thin film by supplying the activating gas to the chamber; and purging residual reactive gas and reaction by-products within the chamber.