发明名称 Semiconductor interconnect and method of making same
摘要 An integrated circuit interconnect structure includes a conductive line, a first barrier layer disposed on a bottom surface of conductive line, a second barrier layer disposed on the top surface of the conductive line, and an interlevel dielectric surrounding the conductive line.
申请公布号 US7619310(B2) 申请公布日期 2009.11.17
申请号 US20060592427 申请日期 2006.11.03
申请人 INFINEON TECHNOLOGIES AG 发明人 HUEBINGER FRANK;CHAE MOOSUNG;TILKE ARMIN;WENDT HERMANN
分类号 H01L23/48;H01L21/4763 主分类号 H01L23/48
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