| 摘要 |
<p>PURPOSE: A method for preparing a phase shift mask is provided to effectively remove a resist without the change of transmissivity of the phase shift mask. CONSTITUTION: A method for preparing a phase shift mask comprises the steps of: forming a phase shift film and light screening film on a transparent substrate; forming a resist pattern on a light shield layer; etching the light shield layer and the phase shift mask using resist pattern as a mask; loading the substrate inside ICP(Inductively Coupled Plasma); forming plasma by introducing reaction gas inside the etching equipment; and removing the resist pattern by minimizing bias power and applying incident power.</p> |
