发明名称 |
PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
Higher conversion efficiency and productivity of photoelectric conversion devices. A semiconductor layer including a first and second crystal regions grown in the layer-deposition direction is provided between an impurity semiconductor layer containing an impurity element imparting one conductivity type and an impurity semiconductor layer containing an impurity element imparting a conductivity type opposite to the one conductivity type. The first crystal region is grown from the interface between one of the impurity semiconductor layers and the semiconductor layer. The second crystal region is grown toward the interface between the semiconductor layer and the other of the impurity semiconductor layers from a position which is away from the interface between the one of the impurity semiconductor layers and the semiconductor layer. The semiconductor layer including the first and second crystal regions which exist in an amorphous structure forms the main part of a region for photoelectric conversion.
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申请公布号 |
US2009277504(A1) |
申请公布日期 |
2009.11.12 |
申请号 |
US20090435133 |
申请日期 |
2009.05.04 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
H01L31/0368;H01L21/20 |
主分类号 |
H01L31/0368 |
代理机构 |
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代理人 |
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地址 |
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