Semiconductor power switch

摘要

A Semiconductor power switch comprises one first lGBT (1) and at least one second lGBT (2). The collectors of both IGBTs and also the emitters of both IGBTs are connected to each other. The first IGBT (1) is an IGBT type with comparatively low collector-emitter on voltage and comparatively high turn on or turn off switching energy. In contrast thereto the second IGBT (2) is an IGBT type with comparatively high collector-emitter on voltage and comparatively low turn on or turn off switching energy. Both IGBTs receive gate signals from a control circuit (10) for switching the power switch on during a first time interval and off during a second time interval. The control circuit (10) is designed to deliver an on signal to the second IGBT (2) during the whole first time interval and an on signal to the first IGBT (1) during only parts of the first time interval.