FORMING METHOD OF AMORPHOUS SILICONE THIN FILM

摘要

PURPOSE: A method of forming an amorphous silicon thin film is provided to form a thin film of the uniform thickness by supplying a silicon source and exciting plasma at the same time, and then being reacted with H2. CONSTITUTION: A method of forming an amorphous silicon thin film is comprised of the steps: supplying a silicon source on a semiconductor substrate; supplying an H2 gas is supplied on the semiconductor, and exciting plasma, and then forming an absorbing layer on the semiconductor substrate; supplying a purge gas on the semiconductor substrate on which a absorption layer is formed; forming the silicon thin film on the semiconductor substrate by supplying the H2 gas on the semiconductor substrate; and supplying the purge gas to the semiconductor substrate on which the silicon thin film is formed.