| 摘要 |
PURPOSE: A nitride light emitting device and a manufacturing method thereof are provided to secure the stability of an annealing by forming a pad electrode on the surface of an N-type nitride semiconductor layer having low contact resistance and excellent electrical stability. CONSTITUTION: In a nitride light emitting device and a manufacturing method thereof, a P-type electrode(308), a P-type nitride semiconductor layer(306), an active layer(304), an N-type nitride semiconductor layer(302), an N electrode(310), and a pad electrode(318) are formed on the substrate. The N type nitride semiconductor layer is made of AlxGayInzN. The N electrode is contacted with the surface of a Ga polarity of the N nitride semiconductor layer, and the pad electrode is contacted with the N-surface of the N type nitride semiconductor layer. N electrode and the pad electrode are interconnected through a hall(316), and the pad electrode is formed on internal hole and the surface of the N-type nitride semiconductor layer. |
