| 摘要 |
<P>PROBLEM TO BE SOLVED: To make antireflection behavior and etching resistance of a substrate at the time of the exposure of a mask pattern compatible with each other in an exposure method for manufacturing a semiconductor device. <P>SOLUTION: A candidate material of an interlayer film is selected from a material having a role as an etching material of a lower layer film. Its complex refraction index is measured. Then, the range of incident angle of light in connection with image formation to photoresist is determined from σ value of duplex pole lighting. Then, the reflection factor of an interface between the photoresist and the interlayer film is calculated and the maximum value and the average value of the reflection factor within the range of incident angle are obtained. Then, exposure is actually performed and an exposure margin is obtained. It is determined whether the material can be actually applied as the interlayer film by investigating the maximum value and the average value of the reflection factor within the range of incident angle for the material of the interlayer film when the mass-producible exposure margin is obtained. <P>COPYRIGHT: (C)2010,JPO&INPIT |
