Semiconductor substrate manufacturing method for e.g. laser diode, involves maintaining predefined temperature for pre-defined period, and cooling semiconductor layer substrate with predefined curvature

摘要

The method involves selecting to-be-connected surfaces of a curved semiconductor layer (1) and another curved semiconductor layer, respectively. Adhesive e.g. sucrose, is applied on one of the surfaces. The latter layer is arranged on the surface on which adhesive is applied. Compressing and heating the layers to a predefined temperature. Pressure is distributed in such a manner that a flat-parallel semiconductor layer substrate is formed and a predefined curvature of the substrate is obtained. The temperature is maintained for a predefined period. The substrate with the curvature is cooled. An independent claim is also included for a semiconductor layer structure comprising a flat-parallel semiconductor layer.