| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of performing high-luminescence and long-term stable operation while crystallinity is improved, and to provide a method for manufacturing the element, and an epitaxial wafer. <P>SOLUTION: The semiconductor light-emitting element includes a GaP substrate in a range of 3×10<SP>17</SP>to 1×10<SP>18</SP>cm<SP>-3</SP>in a carrier concentration, a bonding layer with a first surface side bonded to the GaP substrate, and an upper growing layer formed on a second surface side facing the first surface side of the bonding layer and provided with a light emitting layer capable of emitting light which can be transmitted through the GaP substrate while the deviation of a lattice from the bonding layer is smaller than that between the GaP substrate and the bonding layer. Such a semiconductor light-emitting element, its manufacturing method, and the epitaxial wafer are provided. <P>COPYRIGHT: (C)2010,JPO&INPIT |
