| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a thin film transistor having satisfactory electrical characteristics. SOLUTION: This thin film transistor has a gate electrode layer, a first insulating layer provided to cover the gate electrode layer, a pair of dopant semiconductor layers at least a part of which is superimposed over the gate electrode layer and which is separately provided to form a source region and a drain region, a pair of second insulating layers separately provided in a channel direction on the first insulating layer so that at least a part of the layers is superimposed over the gate electrode layer and a pair of the dopant semiconductor layers, and an amorphous semiconductor layer extending between a pair of microcrystal semiconductor layers while covering the first insulating layer, a pair of the second insulating layers, and a pair of the microcrystal semiconductor layers. A silicon nitride layer is used as the first insulating layer, and oxidized silicon layers are used as a pair of the second insulating layers. COPYRIGHT: (C)2010,JPO&INPIT |
