发明名称 |
METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE |
摘要 |
Forming a capacitor of a semiconductor device includes forming an interlayer dielectric having holes over a semiconductor substrate. A conductive layer is then formed on surfaces of the holes and on the upper surface of the interlayer dielectric. A silicon-containing conductive layer is formed by flowing a silicon source gas for the semiconductor substrate formed with the conductive layer, so that silicon atoms can penetrate into the conductive layer. The silicon-containing conductive layer prevents etchant from infiltrating the interlayer dielectric below the silicon-containing conductive layer.
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申请公布号 |
US2009275186(A1) |
申请公布日期 |
2009.11.05 |
申请号 |
US20080265759 |
申请日期 |
2008.11.06 |
申请人 |
PARK CHEOL HWAN;CHO HO JIN;KIM JAE SOO;LEE DONG KYUN |
发明人 |
PARK CHEOL HWAN;CHO HO JIN;KIM JAE SOO;LEE DONG KYUN |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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