INSULATED GATE THIN FILM TRANSISTOR

摘要

<P>PROBLEM TO BE SOLVED: To electronically control the gate threshold voltage of an insulated gate thin film transistor formed in a semiconductor thin film where a carrier is depleted between first and second principal planes of complete depletion-type SOI, and the like. Ž<P>SOLUTION: A carrier amount is controlled by providing a reverse conducting third semiconductor region that contacts the semiconductor thin film, and supplying a reverse conducting carrier from the semiconductor region to the semiconductor thin film or drawing a reverse conducting carrier from the semiconductor thin film to the third semiconductor region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž