| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new photoacid generator suitable as a photoacid generator for resist material, capable of suppressing elution to water in ArF liquid immersion exposure and generation of contamination specific to liquid immersion exposure, and be effectively used while satisfying problems of density dependency and line edge roughness, and to provide a resist material and a patterning process using the same. <P>SOLUTION: The photoacid generator for chemically amplified resist material generates a sulfonic acid of formula (1a) upon exposure to high-energy radiation of ultraviolet ray, far ultraviolet ray, electron beam, EUV, X-ray, eximer laser, γ-ray or synchrotron radial ray: general formula (1a): ROC(=O)R<SP>1</SP>-COOCH<SB>2</SB>CF<SB>2</SB>SO<SB>3</SB><SP>-</SP>H<SP>+</SP>, wherein RO is OH or 1-20C organoxy group, R<SP>1</SP>is a 1-20C divalent aliphatic group or may form a cyclic structure with RO. The photoacid generator is compatible with resins in resist materials, and can control acid diffusion. Such photoacid generators generating sulfonic acids are thus suited for use in steps of application, pre-exposure baking, exposure, after-exposure baking, and development in a device manufacturing process. <P>COPYRIGHT: (C)2010,JPO&INPIT |
