发明名称 |
Metal-Oxide-Semiconductor Device Including an Energy Filter |
摘要 |
A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel.
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申请公布号 |
US2009273011(A1) |
申请公布日期 |
2009.11.05 |
申请号 |
US20090504404 |
申请日期 |
2009.07.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BJOERK MIKAEL T.;KARG SIEGFRIED F.;KNOCH JOACHIM;RIEL HEIKE E.;RIESS WALTER H.;SCHMID HEINZ |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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