| 摘要 |
<P>PROBLEM TO BE SOLVED: To partially improve reliability in a memory device by reducing additional circuits for a nonvolatile memory device. <P>SOLUTION: A nonvolatile memory management device includes an address/mode storage part 110, so as to perform control to change the data length of a data part to be inputted/outputted between a data buffer 200 and a nonvolatile memory 30 by a management mode to be determined by the address. Consequently, the rate of data correctable by an ECC code to be added to the read data is increased, thereby improving reliability in the data stored in a designated area. <P>COPYRIGHT: (C)2010,JPO&INPIT |
