| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a laminated structure that realizes an oriented surface of a crystalline surface (002) in an antiferromagnetic layer. Ž<P>SOLUTION: The magnetoresistance effect element includes an antiferromagnetic layer 53 laminated on a base layer 52 formed of nitride. The antiferromagnetic layer 53 includes the most dense surface on the crystalline surface (111). In the antiferromagnetic layer 53, the crystal orientation of the crystalline surface (002) is carried out in parallel with the surface of the base layer. On the antiferromagnetic layer 53, a reference layer 56 that fixes magnetization in the predetermined direction is laminated based on the switched connection with the antiferromagnetic layer 53. In such a magnetoresistance effect element, priority orientation of the surface (002) is performed in the reference layer 56. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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