| 摘要 |
A method forms a nonvolatile memory device (10) using a semiconductor substrate (12). A charge storage layer (14) is formed overlying the semiconductor substrate and a layer of gate material is formed overlying the charge storage layer (14) to form a control gate electrode (16). A protective layer (18,20) overlies the layer of gate material. Dopants are implanted into the semiconductor substrate (12) and are self-aligned to the control gate electrode on at least one side of the control gate electrode (16) to form a source (34) and a drain (36) in the semiconductor substrate on opposing sides of the control gate electrode (16). The protective layer prevents the dopants from penetrating into the control gate electrode. The protective layer that overlies the layer of gate material is removed. Electrical contact (42, 44, and 48) is made to the control gate electrode (16), the source (34) and the drain (36). In one form a select gate (28) is also provided in the memory device. |
