MANUFACTURING METHOD OF THE SAMEINVERSE STAGGERED POLY-SI TFT WITH CENTET OFF-SET

摘要

PURPOSE: A method of manufacturing inverse staggered poly-Si TFT with center off-set is provided to prevent leakage current by forming the offset region in the center of active layer channel. CONSTITUTION: The buffer layer(20) is formed on the substrate(10). The gate electrode(30) of the center offset structure is formed on the buffer layer. The gate insulating layer(40) is formed on the gate electrode. The active layer(50) is formed on the gate insulating layer. The n+ amorphous silicon Ohmic contact layer(60) is evaporated on the active layer. The source / drain electrode is formed on the n+ amorphous silicon Ohmic contact layer.