| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device and a manufacturing method thereof. <P>SOLUTION: The semiconductor device has a semiconductor substrate 10 having an electrode 14 formed thereon; a resin layer 20 formed so as to avoid the electrode 14; a land 32 provided on the resin layer 20; a wiring 34 for electrically connecting the electrode 14 to the land 32; and an external terminal 40 joined to the land 32. The resin layer 20 includes a first resin portion 22 supporting an end while avoiding the center portion of a joining surface 35 of the land 32 to the external terminal 40; and a second resin portion 24 adjacent to the first resin portion 22. The first resin portion 22 has an elastic modulus lower than that of the second resin portion 24. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
