| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
<p>PURPOSE: A method for forming semiconductor device is provided to produce a reticle which can be used together at multi layer and reduce reticle production cost. CONSTITUTION: A method for forming semiconductor device comprises: a step of forming plural mother verniers to multi layers at each difference area; a step of treating all daughter verniers except for daughter verniers (15a,15b) corresponding to the exposed layer with blind (32); and a step of forming daughter verniers corresponding to the multi layers.</p> |
| 申请公布号 |
KR20090112923(A) |
申请公布日期 |
2009.10.29 |
| 申请号 |
KR20080038712 |
申请日期 |
2008.04.25 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KWON, KI SUNG;CHO, DAE HEE |
| 分类号 |
H01L21/027;G03F1/68 |
主分类号 |
H01L21/027 |
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