| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a high quality oxide single crystal by suppressing generation of cracks and residual stress in the single crystal when a grown single crystal is separated from a raw material melt. Ž<P>SOLUTION: In the method for producing the oxide single crystal by a melting/solidifying method, a raw material for the single crystal is charged in a crucible 1 in a furnace body 6 to be heated and melted by a heater 3 provided on the side surface of the crucible 1, and then the crystal grown by bringing a seed crystal into contact with the raw material melt is pulled up. When crystal growth is finished, the oxide single crystal is separated by descending the crucible 1 containing the raw material melt while lowering the temperature in the furnace, and holding the grown oxide single crystal so that the straight body part of the single crystal is positioned lower than the upper end of the heater 3. Thereby, the stress accumulated inside the crystal is removed, crack generated after separating the crystal is suppressed, and the residual stress inside the crystal is mitigated, resulting in reduction of crack and deformation of a wafer, occurring during processing of the wafer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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