| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an inverter and a logic circuit including the same. <P>SOLUTION: The inverter that is connected to a depletion-mode load transistor having a first oxide layer as a channel layer and a load transistor and has an enhancement-mode drive transistor with a second oxide layer as a channel layer, wherein a barrier layer whose work function is bigger than that of the second oxide layer is further provided between the second oxide layer and a source electrode and a drain electrode corresponding thereto, and the barrier layer is configured such that at least one is a doped ZnO based oxide layer out of Ti oxide layer, Cu oxide layer, Ni oxide layer, Ti-doped Ni oxide layer, ZnO based oxide layer, group I, group II, and group V elements, and one is out of Ag-doped ZnO based oxide layers is provided. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
