| 摘要 |
PURPOSE: A method for manufacturing a stripe-channel high electron mobility transistor(HEMT) is provided to reduce parasitic capacitance by effectively connecting a T-typed gate of the HEMT or a metal semiconductor field effect transistor(MESFET), with another metal layer. CONSTITUTION: A method for manufacturing a stripe-channel high electron mobility transistor(HEMT) comprises the steps of: forming a first conductive layer on a semiconductor substrate; stacking first and second photoresist layers on the entire structure having the first conductive layer, forming a first photoresist layer pattern on the region in which the semiconductor substrate and the first conductive layer form a step difference by exposure and development through electronic beams or ion beams, and forming stacked patterns of the first and second photoresist layers, on the first conductive layer and semiconductor substrate isolated from the first photoresist layer pattern; forming the second conductive layer on the entire structure having the first and second photoresist layer patterns to lift off the first and second photoresist layer pattern.
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