发明名称 PHOTO MASK, FOCUS MEASURING METHOD USING THE MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A photo mask includes an asymmetrical diffraction grating pattern in which diffraction efficiencies of plus primary diffracted light and minus primary diffracted light are different, the asymmetrical diffraction grating pattern including a shielding portion which shields light, a first transmitting portion which transmits light, and a second transmitting portion which transmits light, a ratio of widths of the shielding portion, the first transmitting portion, and the second transmitting portion being n11 where n is a positive real number except 2, the asymmetrical diffraction grating pattern approximately satisfying 163�<=360�/(n+2)+theta<=197� where theta (90�) indicates an absolute value of a difference between a phase of the light transmitted through the first transmitting portion and that of the light transmitted through the second transmitting portion, and a reference pattern for obtaining an image as a reference for measuring a shift of an image of the asymmetrical diffraction grating pattern.
申请公布号 US2009263733(A1) 申请公布日期 2009.10.22
申请号 US20090496585 申请日期 2009.07.01
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NOMURA HIROSHI
分类号 G03F1/00;G03F1/28;G03F1/68;G03F7/20;H01L21/027 主分类号 G03F1/00
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