发明名称 |
METHOD OF FORMING SHALLOW TRENCH ISOLATION STRUCTURES FOR INTEGRATED CIRCUITS |
摘要 |
A method of forming shallow trench isolation (STI) structures using a multi-step etch process is disclosed. The first etch step is performed by selectively etching the substrate at a substantially higher etching rate than the mask layer to form preliminary openings having steep taper angles. The second etch step is performed by non-selectively etching the substrate to deepen the preliminary openings to form STI gaps with substantially flat bottoms.
|
申请公布号 |
US2009261448(A1) |
申请公布日期 |
2009.10.22 |
申请号 |
US20080107751 |
申请日期 |
2008.04.22 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
MISHRA SHAILENDRA;LEE JAMES YONG MENG;LUN ZHAO;GAO WEN ZHI;LAI CHUNG WOH;LIU HUANG;WIDODO JOHNNY;HSIA LIANG CHOO |
分类号 |
H01L21/762;H01L23/58 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|