| 摘要 |
PURPOSE: An MTJ MRAM cell, an array of MTJ MRAM cells, and a method of forming an MTJ MRAM cell are provided to generate a higher magnetic flux in the MTJ free layer to a predetermined recording current. CONSTITUTION: An MTJ MRAM cell, an array of MTJ MRAM cells, and a method of forming an MTJ MRAM cell includes the super-thin films bit line(20), and the super-thin films write word line(10) and magnetic tunnel joining cell element. The super-thin films bit line is made of the electric conductive material and has the top surface and bottom surface. The super-thin films bit line is extended in the first direction within the first horizontal planes. The super-thin films bit line has the thickness smaller than 100nm. The super-thin films write word line is made of the electric conductive material. The magnetic tunnel joining cell element is horizontally multiple-layered.
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