发明名称 Semiconductor device for high frequency power amplification
摘要 A semiconductor device includes, a metal base plate, a semiconductor element mounted on the base plate, first and second dielectric plates are mounted on the base plate in the vicinity of the semiconductor element. The first and second dielectric plates are composed of such an insulator material as diamond having higher heat conductivity than that of the base plate material.
申请公布号 US7605465(B2) 申请公布日期 2009.10.20
申请号 US20050317182 申请日期 2005.12.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKAGI KAZUTAKA
分类号 H01L23/373 主分类号 H01L23/373
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