发明名称 |
Method for improved manufacturability and patterning of sub-wavelength contact hole mask |
摘要 |
A method of applying optical proximity correction features to a mask having a target pattern comprising a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; determining an interference map based on the process parameters and the target pattern; defining an area of influence which represents the area about a given feature in the target pattern in which scattering bars will be utilized in the mask; and disposing a scattering bar in the mask adjacent the given feature in a location indicated by said interference map only within the area of influence of the given feature.
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申请公布号 |
US7604909(B2) |
申请公布日期 |
2009.10.20 |
申请号 |
US20060647599 |
申请日期 |
2006.12.29 |
申请人 |
ASML MASKTOOLS B.V. |
发明人 |
HSU CHUNG-WEI;VAN DEN BROEKE DOUGLAS;CHEN JANG FUNG |
分类号 |
G03F1/00;G03F5/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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