发明名称 |
METHOD FOR FORMING DOPED POLYSILICON VIA CONNECTING POLYSILICON LAYERS |
摘要 |
The invention provides for polysilicon vias connecting conductive polysilicon layers formed at different heights. Polysilicon vias are advantageously used in a monolithic three dimensional memory array of charge storage transistors. Polysilicon vias according to the present invention can be used, for example, to connect the channel layer of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells formed above the first device level. Similarly, vias according to the present invention can be used to connect the wordline of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells.
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申请公布号 |
US2009258462(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20090489214 |
申请日期 |
2009.06.22 |
申请人 |
KONEVECKI MICHAEL W;RAGHURAM USHA;MAHAJANI MAITREYEE;NALLAMOTHU SUCHETA;WALKER ANDREW J;KUMAR TANMAY |
发明人 |
KONEVECKI MICHAEL W.;RAGHURAM USHA;MAHAJANI MAITREYEE;NALLAMOTHU SUCHETA;WALKER ANDREW J.;KUMAR TANMAY |
分类号 |
H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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