THIN-FILM TRANSISTOR, CARBON-BASED LAYER AND METHOD OF PRODUCING THEREOF

摘要

The present invention relates to a thin-film transistor which comprises a conductive and predominantly continuous carbon-based layer (3) comprising predominantly planar graphene-like structures. The graphene-like structures may be in the following various forms: planar graphene-like nanoribbons oriented predominantly perpendicularly to the carbon-based layer surface or planar graphene-like sheets oriented predominantly parallel to the carbon-based layer surface. The carbon-based layer thickness is in the range from approximately 1 to 1000 nm.