METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To improve ESD (Electro Static Discharge) breakdown voltage in a method of manufacturing a light emitting element.

SOLUTION: A method of manufacturing a light emitting element includes a step of forming an MQW (Multi Quantum Well) active layer 24 that includes: the steps of forming a well layer 21 made of a nitride semiconductor; and forming a barrier layer 23 made of a nitride semiconductor on the well layer 21 at a growth temperature which is 130 to 150°C higher than the growth temperature of the well layer 21. The ESD breakdown voltage is improved by setting the difference in growth temperature between the barrier layer 23 and well layer 21 to not less than 130°C.

COPYRIGHT: (C)2010,JPO&INPIT