发明名称 Bipolar-MOS circuits with dimensions scaled to enhance performance
摘要 An optimum ratio relating the characteristic dimensions of the MOS pull-up and the MOS pull-down devices of a logic circuit with one or more bipolar devices connected to an output of the circuit. This optimum ratio substantially minimizes the propagation delay of the circuit. The first preferred embodiment is shown in a BiNMOS circuit, and the second preferred embodiment is shown in a BiCMOS circuit.
申请公布号 US5332933(A) 申请公布日期 1994.07.26
申请号 US19930006418 申请日期 1993.01.21
申请人 HEWLETT-PACKARD COMPANY 发明人 RAJE, PRASAD A.
分类号 H01L27/06;H01L21/8249;H03K17/04;H03K19/01;H03K19/08;H03K19/0944;(IPC1-7):H03K19/01 主分类号 H01L27/06
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