| 摘要 |
PROBLEM TO BE SOLVED: To permit spin implantation flux to be reversal, al at high TMR (tunnel magneto-resistance) ratio and low current. SOLUTION: Magneto-resistance effect element is provided with the stack structure of base layer 11, a first magnetic layer 12, a tunnel barrier layer 13 and a second magnetic layer 14. The remanent magnetization of the first and second magnetic layers 12, 14 faces a direction which is l to the film surfaces of them, and the magnetization direction is not changed in one of the first and second magnetic layers 12, 14, while the magnetization direction is variable in the other of them. The first magnetic layer 12 is a ferromagnetic metal, consisting of not less than one element selected from the first group of Co, Fe and Ni, as well as, not less than one element selected from a second group of Cu, Ag, Au, Pd, Pt, Ru, Rh, Ir and Os while the base layer 11 is a metal containing one element selected from among the third group of Al, Ni, Co, Fe, Mn, Cr and V or a metal containing more than two kinds of elements selected from among a third group. COPYRIGHT: (C)2010,JPO&INPIT |
