| 摘要 |
<P>PROBLEM TO BE SOLVED: To simplify the manufacturing processes and reduce the dark current of an imaging portion, in a manufacturing method of a solid-state imaging element. Ž<P>SOLUTION: The manufacturing method has a GP etch processing for forming the gate electrode of a MOS transistor, a SW etch processing for forming sidewalls in the side walls of the gate electrode, and an anneal processing for performing an anneal processing, after forming the gate electrode and the side walls. After the annealing processing, an S/D preinjection processing for forming the source/drain regions of the MOS transistor and an LDD injection processing for forming the impurity diffusing regions for LDD are performed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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