发明名称 |
MAGNETORESISTIVE SENSOR WITH SUB-LAYERING OF PINNED LAYERS |
摘要 |
Methods and apparatus provide magnetoresistance sensors. A tunneling magnetoresistance (TMR) sensor may include configurations that are arranged as a top TMR stack. One of two antiparallel layers of pinned layers within the TMR stack may be subdivided by a spacer layer. Tantalum may form the spacer layer that is inserted in a reference layer, which is one of the pinned layers and is located between a barrier layer and an antiparallel coupling layer that enables antiparallel coupling between the reference layer and a keeper layer of the pinned layers. The barrier layer deposited on a free layer of the TMR stacks separates the pinned layers from the free layer such that TMR effects are detectable with the sensors.
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申请公布号 |
US2009257149(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20080101761 |
申请日期 |
2008.04.11 |
申请人 |
LEE WEN-YAUNG;MAURI DANIELE;ZELTSER ALEXANDER M |
发明人 |
LEE WEN-YAUNG;MAURI DANIELE;ZELTSER ALEXANDER M. |
分类号 |
G11B5/127 |
主分类号 |
G11B5/127 |
代理机构 |
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地址 |
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